
Auger Electron Spectroscopy (AES), with its nanometer-scale surface sensitivity and elemental depth profiling capabilities, provides critical surface composition solutions for advanced manufacturing industries. MTT provides professional testing technology services, delivering essential feedback for product research and development as well as production. This helps drive continuous improvement and innovation, enhancing product market competitiveness and added value.
| Project Overview
Auger Electron Spectroscopy (AES) is a high-precision surface composition analysis technique. By detecting Auger electrons emitted from a material under excitation, it enables both qualitative and quantitative analysis of the surface elemental composition. With its nanometer-scale spatial resolution and ultra-high sensitivity, it has become a core characterization method in the fields of microelectronics, materials science, and failure analysis.
| Project Objective
By accurately characterizing surface states through variations in elemental content, it can be applied to analyze surface contamination, measure oxide film thickness, and evaluate interfacial composition distribution. These microstructural features provide critical data for material failure analysis and process optimization.
| Testing Scope
| Service Products / Fields
Semiconductor Manufacturing: Chip surface contamination and solder joint failure analysis.
Materials Research and Development: Metal oxidation and coating/film performance evaluation.
Failure Analysis: Fracture surface composition and foreign substance traceability.
New Energy: Surface modification research on battery electrodes.
| Project Advantages
1. Ultra-high Spatial Resolution: >50 nm, suitable for microcircuit and nanomaterial analysis.
2. Depth Profiling Capability: Resolution up to 5 nm, enabling characterization of thin films and multilayer film structures.
3. Full Element Coverage: Supports detection of elements from atomic number 1 to 94 (U), excluding hydrogen (H) and helium (He).
4. High-Efficiency Sputtering Rate: 18.56 nm/min, improving the efficiency of deep-layer analysis.